Design of 18∼26GHz receiver with wideband RF, LO and if in 0.15μm GaAs pHEMT process

Ying Chen; Zhong I. Yu; Ching Ying Huang; Kuan Han Hsieh; Shu-I Hu

doi:10.1109/APMC.2017.8251687

Design of 18∼26GHz receiver with wideband RF, LO and if in 0.15μm GaAs pHEMT process

Ying Chen, Zhong I. Yu, Ching Ying Huang, Kuan Han Hsieh, Shu-I Hu

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

This paper describes our progress in designing the K-band receiver in WIN 0.15μm GaAs pHEMT process. The LNA contains three stages of common-source transistors, and its noise performance has been optimized over the intended bandwidth; the following mixer is made of single-balanced transistors where the edge-coupled Marchand balun provides the required 18∼26GHz differential-mode LO while active balun is used for combining the 8GHz IF signals. The conversion gain measured on-wafer at room temperature is around 20dB and the noise temperature is close to 300K, with overall power consumption 140mW, and the chip area is 1000×2500μm2. A close inspection on the wide-IF-band noise measurement procedure is also provided where the impact of conversion gain on the measured Tn is explored. This receiver circuit will facilitate the construction of large focal plane arrays where compact cryogenic receiver module is in urgent demand.

Original language	English
Title of host publication	2017 Asia Pacific Microwave Conference, APMC 2017 - Proceedings
Editors	Idnin Pasya
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1250-1253
Number of pages	4
ISBN (Electronic)	9781538606407
DOIs	https://doi.org/10.1109/APMC.2017.8251687
State	Published - 8 Jan 2018
Event	2017 IEEE Asia Pacific Microwave Conference, APMC 2017 - Kuala Lumpur, Malaysia Duration: 13 Nov 2017 → 16 Nov 2017

Publication series

Name	Asia-Pacific Microwave Conference Proceedings, APMC

Conference

Conference	2017 IEEE Asia Pacific Microwave Conference, APMC 2017
Country	Malaysia
City	Kuala Lumpur
Period	13/11/17 → 16/11/17

Keywords

balun
GaAs
LNA
mixer
receiver

Access to Document

10.1109/APMC.2017.8251687

Link to publication in Scopus

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Chen, Y., Yu, Z. I., Huang, C. Y., Hsieh, K. H., & Hu, S-I. (2018). Design of 18∼26GHz receiver with wideband RF, LO and if in 0.15μm GaAs pHEMT process. In I. Pasya (Ed.), 2017 Asia Pacific Microwave Conference, APMC 2017 - Proceedings (pp. 1250-1253). (Asia-Pacific Microwave Conference Proceedings, APMC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APMC.2017.8251687

Chen, Ying ; Yu, Zhong I. ; Huang, Ching Ying ; Hsieh, Kuan Han ; Hu, Shu-I. / Design of 18∼26GHz receiver with wideband RF, LO and if in 0.15μm GaAs pHEMT process. 2017 Asia Pacific Microwave Conference, APMC 2017 - Proceedings. editor / Idnin Pasya. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1250-1253 (Asia-Pacific Microwave Conference Proceedings, APMC).

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title = "Design of 18∼26GHz receiver with wideband RF, LO and if in 0.15μm GaAs pHEMT process",

abstract = "This paper describes our progress in designing the K-band receiver in WIN 0.15μm GaAs pHEMT process. The LNA contains three stages of common-source transistors, and its noise performance has been optimized over the intended bandwidth; the following mixer is made of single-balanced transistors where the edge-coupled Marchand balun provides the required 18∼26GHz differential-mode LO while active balun is used for combining the 8GHz IF signals. The conversion gain measured on-wafer at room temperature is around 20dB and the noise temperature is close to 300K, with overall power consumption 140mW, and the chip area is 1000×2500μm2. A close inspection on the wide-IF-band noise measurement procedure is also provided where the impact of conversion gain on the measured Tn is explored. This receiver circuit will facilitate the construction of large focal plane arrays where compact cryogenic receiver module is in urgent demand.",

keywords = "balun, GaAs, LNA, mixer, receiver",

author = "Ying Chen and Yu, {Zhong I.} and Huang, {Ching Ying} and Hsieh, {Kuan Han} and Shu-I Hu",

year = "2018",

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Chen, Y, Yu, ZI, Huang, CY, Hsieh, KH & Hu, S-I 2018, Design of 18∼26GHz receiver with wideband RF, LO and if in 0.15μm GaAs pHEMT process. in I Pasya (ed.), 2017 Asia Pacific Microwave Conference, APMC 2017 - Proceedings. Asia-Pacific Microwave Conference Proceedings, APMC, Institute of Electrical and Electronics Engineers Inc., pp. 1250-1253, 2017 IEEE Asia Pacific Microwave Conference, APMC 2017, Kuala Lumpur, Malaysia, 13/11/17. https://doi.org/10.1109/APMC.2017.8251687

Design of 18∼26GHz receiver with wideband RF, LO and if in 0.15μm GaAs pHEMT process. / Chen, Ying; Yu, Zhong I.; Huang, Ching Ying; Hsieh, Kuan Han; Hu, Shu-I.

2017 Asia Pacific Microwave Conference, APMC 2017 - Proceedings. ed. / Idnin Pasya. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1250-1253 (Asia-Pacific Microwave Conference Proceedings, APMC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - This paper describes our progress in designing the K-band receiver in WIN 0.15μm GaAs pHEMT process. The LNA contains three stages of common-source transistors, and its noise performance has been optimized over the intended bandwidth; the following mixer is made of single-balanced transistors where the edge-coupled Marchand balun provides the required 18∼26GHz differential-mode LO while active balun is used for combining the 8GHz IF signals. The conversion gain measured on-wafer at room temperature is around 20dB and the noise temperature is close to 300K, with overall power consumption 140mW, and the chip area is 1000×2500μm2. A close inspection on the wide-IF-band noise measurement procedure is also provided where the impact of conversion gain on the measured Tn is explored. This receiver circuit will facilitate the construction of large focal plane arrays where compact cryogenic receiver module is in urgent demand.

AB - This paper describes our progress in designing the K-band receiver in WIN 0.15μm GaAs pHEMT process. The LNA contains three stages of common-source transistors, and its noise performance has been optimized over the intended bandwidth; the following mixer is made of single-balanced transistors where the edge-coupled Marchand balun provides the required 18∼26GHz differential-mode LO while active balun is used for combining the 8GHz IF signals. The conversion gain measured on-wafer at room temperature is around 20dB and the noise temperature is close to 300K, with overall power consumption 140mW, and the chip area is 1000×2500μm2. A close inspection on the wide-IF-band noise measurement procedure is also provided where the impact of conversion gain on the measured Tn is explored. This receiver circuit will facilitate the construction of large focal plane arrays where compact cryogenic receiver module is in urgent demand.

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Chen Y, Yu ZI, Huang CY, Hsieh KH, Hu S-I. Design of 18∼26GHz receiver with wideband RF, LO and if in 0.15μm GaAs pHEMT process. In Pasya I, editor, 2017 Asia Pacific Microwave Conference, APMC 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1250-1253. (Asia-Pacific Microwave Conference Proceedings, APMC). https://doi.org/10.1109/APMC.2017.8251687