Design, Modeling, and Fabrication of High-Speed VCSEL with Data Rate up to 50 Gb/s

Chih Chiang Shen, Tsung Chi Hsu, Yen Wei Yeh, Chieh Yu Kang, Yun Ting Lu, Hon Way Lin, Hsien Yao Tseng, Yu Tzu Chen, Cheng Yuan Chen, Chien-Chung Lin, Chao Hsin Wu, Po-Tsung Lee, Yang Sheng, Ching Hsueh Chiu*, Hao-Chung Kuo

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

We have studied the characteristics of frequency response at 850-nm GaAs high-speed vertical-cavity surface-emitting lasers (VCSELs) with different kinds of oxide aperture sizes and cavity length using the PICS3D simulation program. Using 5-μm oxide aperture sizes, the frequency response behavior can be improved from 18.4 GHz and 15.5 GHz to 21.2 GHz and 19 GHz in a maximum of 3 dB at 25 °C and 85 °C, respectively. Numerical simulation results also suggest that the frequency response performances improved from 21.2 GHz and 19 GHz to 30.5 GHz and 24.5 GHz in a maximum of 3 dB at 25 °C and 85 °C due to the reduction of cavity length from 3λ/2 to λ/2. Consequently, the high-speed VCSEL devices were fabricated on a modified structure and exhibited 50-Gb/s data rate at 85 °C.

Original languageEnglish
Article number276
JournalNanoscale Research Letters
Volume14
Issue number1
DOIs
StatePublished - 14 Aug 2019

Keywords

  • 50 Gb/s
  • Cavity length
  • High-speed VCSEL
  • Oxide aperture
  • PICS3D

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