A comprehensive study of the performance and reliability constraints on the dimensions and power supply of deep-submicrometer non-LDD (lightly doped drain) n-channel MOSFETs is presented. Design guidelines extracted from experimental results are presented that are based on the following factors: short-channel effects; drain-induced barrier-lowering effects, off-state leakage currents, hot-electron reliability, time-dependent dielectric breakdown, current-driving capability, voltage gain, and switching speed. The relative importance of each mechanism for a given technology and design is examined. As an example, a set of design curves using typical performance and reliability criteria is provided for n-channel deep-submicrometer devices. With slight modifications, these design curves can also be extended to other technologies, including p-channel and LDD devices.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Dec 1988|
|Event||Technical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA|
Duration: 11 Dec 1988 → 14 Dec 1988