Design, Fabrication, and Characterization of n-Si IBC Solar Cells Using PERC Technology

Yin Wei Peng, Chun Heng Chen, Li Yu Li, Pi Yu Hsin, Peichen Yu, Chorng Jye Huang, Jon Yiew Gan*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In this article, high-efficiency n-Si interdigitated back contact solar cells (IBC) were fabricated with the perc-like process. The cell was demonstrated with the efficiency of 22.16% (cell area = 10 × 10 cm), open-circuit voltage of 685 mV, short-circuit current density of 41.21 mA/cm2, and fill factor of 78.48%. The low fill factor can be attributed to the high base recombination taking place under high-level injection. Fill factor over 81% and, therefore, cell efficiency over 23% is expected when wafers of high bulk lifetime (τbulk ≥ 10 ms) or low resistivity (ρ ≤ 1 Ω·cm) are used. The light I-V curve was fully characterized with the optical and electronic properties obtained from independent measurements.

Original languageEnglish
Article number8938135
Pages (from-to)383-389
Number of pages7
JournalIEEE Journal of Photovoltaics
Volume10
Issue number2
DOIs
StatePublished - Mar 2020

Keywords

  • Interdigitated-back-contact cell (IBC) and passivated emitter and rear cell (PERC)

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