Design, Fabrication, and Characterization of n-Si IBC Solar Cells Using PERC Technology

Yin Wei Peng; Chun Heng Chen; Li Yu Li; Pi Yu Hsin; Peichen Yu; Chorng Jye Huang; Jon Yiew Gan

doi:10.1109/JPHOTOV.2019.2958186

Design, Fabrication, and Characterization of n-Si IBC Solar Cells Using PERC Technology

Yin Wei Peng, Chun Heng Chen, Li Yu Li, Pi Yu Hsin, Peichen Yu, Chorng Jye Huang, Jon Yiew Gan^*

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this article, high-efficiency n-Si interdigitated back contact solar cells (IBC) were fabricated with the perc-like process. The cell was demonstrated with the efficiency of 22.16% (cell area = 10 × 10 cm), open-circuit voltage of 685 mV, short-circuit current density of 41.21 mA/cm², and fill factor of 78.48%. The low fill factor can be attributed to the high base recombination taking place under high-level injection. Fill factor over 81% and, therefore, cell efficiency over 23% is expected when wafers of high bulk lifetime (τ_bulk ≥ 10 ms) or low resistivity (ρ ≤ 1 Ω·cm) are used. The light I-V curve was fully characterized with the optical and electronic properties obtained from independent measurements.

Original language	English
Article number	8938135
Pages (from-to)	383-389
Number of pages	7
Journal	IEEE Journal of Photovoltaics
Volume	10
Issue number	2
DOIs	https://doi.org/10.1109/JPHOTOV.2019.2958186
State	Published - Mar 2020

Keywords

Interdigitated-back-contact cell (IBC) and passivated emitter and rear cell (PERC)

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title = "Design, Fabrication, and Characterization of n-Si IBC Solar Cells Using PERC Technology",

abstract = "In this article, high-efficiency n-Si interdigitated back contact solar cells (IBC) were fabricated with the perc-like process. The cell was demonstrated with the efficiency of 22.16% (cell area = 10 × 10 cm), open-circuit voltage of 685 mV, short-circuit current density of 41.21 mA/cm2, and fill factor of 78.48%. The low fill factor can be attributed to the high base recombination taking place under high-level injection. Fill factor over 81% and, therefore, cell efficiency over 23% is expected when wafers of high bulk lifetime (τbulk ≥ 10 ms) or low resistivity (ρ ≤ 1 Ω·cm) are used. The light I-V curve was fully characterized with the optical and electronic properties obtained from independent measurements.",

keywords = "Interdigitated-back-contact cell (IBC) and passivated emitter and rear cell (PERC)",

author = "Peng, {Yin Wei} and Chen, {Chun Heng} and Li, {Li Yu} and Hsin, {Pi Yu} and Peichen Yu and Huang, {Chorng Jye} and Gan, {Jon Yiew}",

year = "2020",

month = mar,

doi = "10.1109/JPHOTOV.2019.2958186",

language = "English",

volume = "10",

pages = "383--389",

journal = "IEEE Journal of Photovoltaics",

issn = "2156-3381",

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T1 - Design, Fabrication, and Characterization of n-Si IBC Solar Cells Using PERC Technology

AU - Peng, Yin Wei

AU - Chen, Chun Heng

AU - Li, Li Yu

AU - Hsin, Pi Yu

AU - Yu, Peichen

AU - Huang, Chorng Jye

AU - Gan, Jon Yiew

PY - 2020/3

Y1 - 2020/3

N2 - In this article, high-efficiency n-Si interdigitated back contact solar cells (IBC) were fabricated with the perc-like process. The cell was demonstrated with the efficiency of 22.16% (cell area = 10 × 10 cm), open-circuit voltage of 685 mV, short-circuit current density of 41.21 mA/cm2, and fill factor of 78.48%. The low fill factor can be attributed to the high base recombination taking place under high-level injection. Fill factor over 81% and, therefore, cell efficiency over 23% is expected when wafers of high bulk lifetime (τbulk ≥ 10 ms) or low resistivity (ρ ≤ 1 Ω·cm) are used. The light I-V curve was fully characterized with the optical and electronic properties obtained from independent measurements.

AB - In this article, high-efficiency n-Si interdigitated back contact solar cells (IBC) were fabricated with the perc-like process. The cell was demonstrated with the efficiency of 22.16% (cell area = 10 × 10 cm), open-circuit voltage of 685 mV, short-circuit current density of 41.21 mA/cm2, and fill factor of 78.48%. The low fill factor can be attributed to the high base recombination taking place under high-level injection. Fill factor over 81% and, therefore, cell efficiency over 23% is expected when wafers of high bulk lifetime (τbulk ≥ 10 ms) or low resistivity (ρ ≤ 1 Ω·cm) are used. The light I-V curve was fully characterized with the optical and electronic properties obtained from independent measurements.

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JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

SN - 2156-3381

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Design, Fabrication, and Characterization of n-Si IBC Solar Cells Using PERC Technology

Abstract

Keywords

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