The fundamental design factors affecting semiconductor optical amplifier (SOA) linearity and a way to reduce the nonlinearity without sacrificing the gain are investigated. The first factor, a small confinement factor, affects the SOA linearity by diluting the optical intensity and allowing the gain compression to happen at higher output power. These are done by using diluted waveguide and shift the gain medium to the side instead of middle of the waveguide. The device length is the second factor. A long amplifier amplifies lower power signals more and high power signals less, while the shorter amplifier has better gain linearity. The third factor is the carrier injection profile that prevent carrier depletion to keep the gain linearity.
|Number of pages||2|
|Journal||Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS|
|State||Published - 1 Dec 1997|
|Event||Proceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2) - San Francisco, CA, USA|
Duration: 10 Nov 1997 → 13 Nov 1997