Design and Simulation of Intermediate Band Solar Cell with Ultradense Type-II Multilayer Ge/Si Quantum Dot Superlattice

Yi Chia Tsai, Ming-Yi Lee, Yi-Ming Li*, Seiji Samukawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We studied the miniband dependence on the structural parameters and shape in type-II multilayer germanium (Ge)/silicon (Si) quantum dot superlattice (QDSL) solar cell. A maximum tunable range of ground-state energy is 19% by tuning layer distance down to 0.5 nm, whereas 24.5% is achieved by adjusting the horizontal dot-to-dot spacing down to 0.3 nm. The reduction of effective bandgap is severe for cylindrical QDs than ellipsoidal and conical QDs in the ultradense QDSL, thus leading to a relatively lower conversion efficiency. On average, the thickness of QD shows a negative correlation to conversion efficiency. We observed a high conversion efficiency of 27.22% in a bilayer conical QDSL under an AM1.5 spectral irradiance and one sun illumination.

Original languageEnglish
Article number8057574
Pages (from-to)4547-4553
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume64
Issue number11
DOIs
StatePublished - 1 Nov 2017

Keywords

  • Conversion efficiency
  • Ge/Si quantum dot (QD)
  • density of states (DoSs)
  • layer distance
  • minibands
  • multilayer
  • solar cell
  • superlattice
  • ELECTRONIC-STRUCTURE
  • EFFICIENCY
  • LIMIT
  • SI

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