Design and implementation of multi-octave low-noise power amplifier (LNPA) using HIFET configuration

Che Yang Chiang*, Heng-Tung Hsu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

This paper reports an low-noise-power amplifier (LNPA) MMIC using HIFET (High-Voltage, High-Impedance FET) configuration with very broadband performance in terms of noise figure, output power and linearity. Based on 0.15μm pHEMT technology, this MMIC delivers a gain of 12.5 ± 1dB, 1.5 ∼ 2.5 dB noise figure (NF), good impedance match with S11/S22 less than -10 dB, and over 15 dBm of output P1dB covering the entire 2 GHz to 13 GHz with 25% peak efficiency, at a bias voltage of 4 V. The proposed LNPA also demonstrates excellent thermal stability. The measured thermal-sensitivity coefficient for the small-signal gain is as low as 0.0144 dB/°C with respect to the temperature variation from -30°C to 150°C. The overall chip area is as small as 0.93 mm2 excluding test pads.

Original languageEnglish
Title of host publication2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings
Pages956-958
Number of pages3
DOIs
StatePublished - 1 Dec 2012
Event2012 Asia-Pacific Microwave Conference, APMC 2012 - Kaohsiung, Taiwan
Duration: 4 Dec 20127 Dec 2012

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC

Conference

Conference2012 Asia-Pacific Microwave Conference, APMC 2012
CountryTaiwan
CityKaohsiung
Period4/12/127/12/12

Keywords

  • Low-noise amplifiers
  • microwave devices
  • microwave power FET amplifiers
  • radiofrequency amplifiers

Fingerprint Dive into the research topics of 'Design and implementation of multi-octave low-noise power amplifier (LNPA) using HIFET configuration'. Together they form a unique fingerprint.

Cite this