Design and fabrication of temperature-insensitive InGaP-InGaAlP resonant-cavity light-emitting diodes

Yi An Chang*, Chun Lung Yu, I. Tsung Wu, Hao-Chung Kuo, Tien-chang Lu, Fang I. Lai, Li Wen Laih, Li Horng Laih, Shing Chung Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Visible InGaP-InGaAlP resonant-cavity light-emitting diodes with low-temperature sensitivity output characteristics were demonstrated. By means of widening the resonant cavity to a thickness of three wavelength (3λ), the degree of power variation between 25 °C and 95 °C for the devices biased at 20 mA was apparently reduced from -2.1 dB for the standard structure design (1 - λavity) to -0.6 dB. An output power of 2.4 mW was achieved at 70 mA. The external quantum efficiency achieved a maximum of 3% at 13 mA and dropped slowly with increased current for the device. The external quantum efficiency at 20 mA dropped only 14% with elevated temperature from 25 °C to 95 °C. The current dependent far-field patterns also showed that the emission always took place perfectly in the normal direction, which was suitable for plastic fiber data transmission.

Original languageEnglish
Pages (from-to)1690-1692
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number16
DOIs
StatePublished - 15 Aug 2006

Keywords

  • InGaAlP
  • Light-emitting diode (LED)
  • Optical communication
  • Optoelectronic device
  • Resonant cavity

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