Design and fabrication of MEMS logic gates

Chun Yin Tsai*, Wei Ting Kuo, Chi Bao Lin, Tsung-Lin Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

39 Scopus citations

Abstract

This paper presents a novel design of MEMS logic gate that can perform Boolean algebra the same as logic devices that are composed of solid-state transistors. This MEMS logic gate design inherits all the advantages from MEMS switches and thus is expected to have more applications than MEMS switches. One unique feature of this device is that it can perform either NAND gate or NOR gate functions with the same mechanical structure but with different electrical interconnects. In a prototype design, the device is 250 νm long, 100 νm wide and has 1 νm gap. The experimental results show that this device can operate at 10/0 V and achieve the proposed logic functions. The resonant frequency of the device is measured roughly at 30 kHz. Due to no metal-to-metal contact in the current device, the logic functions of the design are verified through observations and video taping.

Original languageEnglish
Article number045001
JournalJournal of Micromechanics and Microengineering
Volume18
Issue number4
DOIs
StatePublished - 1 Apr 2008

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