Design and fabrication of GaAs hall IC with SCFL Schmitt Trigger

Keijiro Itakura*, Hiroaki Asada, Daisuke Ueda, Hiromitsu Takagi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

A GaAs monolithic Hall IC with superior temperature characteristics has been designed and fabricated by taking advantage of such GaAs material properties as large bandgap and high electron mobility. This IC is designed with SCFL circuits, operates with only a 5‐V power supply, and switches ON and OFF depending on the magnetic field intensity. In addition, it contains a Schmitt trigger circuit to prevent a malfunction by magnetic noise. As a result of designing for low power consumption, the power/current of the IC is approximately 17 mW/3 mA. According to the measurement, the magnetoelectric conversion characteristics and the power consumption of the IC do not show a noticeable change even at the ambient temperature of 150°C.

Original languageEnglish
Pages (from-to)20-27
Number of pages8
JournalElectronics and Communications in Japan (Part II: Electronics)
Volume71
Issue number12
DOIs
StatePublished - 1 Jan 1988

Fingerprint Dive into the research topics of 'Design and fabrication of GaAs hall IC with SCFL Schmitt Trigger'. Together they form a unique fingerprint.

Cite this