A GaAs monolithic Hall IC with superior temperature characteristics has been designed and fabricated by taking advantage of such GaAs material properties as large bandgap and high electron mobility. This IC is designed with SCFL circuits, operates with only a 5‐V power supply, and switches ON and OFF depending on the magnetic field intensity. In addition, it contains a Schmitt trigger circuit to prevent a malfunction by magnetic noise. As a result of designing for low power consumption, the power/current of the IC is approximately 17 mW/3 mA. According to the measurement, the magnetoelectric conversion characteristics and the power consumption of the IC do not show a noticeable change even at the ambient temperature of 150°C.
|Number of pages||8|
|Journal||Electronics and Communications in Japan (Part II: Electronics)|
|State||Published - 1 Jan 1988|