Design and characterization of cryogenic wideband LNA using WIN 0.15 μm GaAs pHEMT process

Ying Chen, Bin Li, Kun Long Wu, Shu-I Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

This manuscript describes our progress in the development of cryogenic wideband LNA for radio-astronomical applications. With technology maturity and fabrication cost taken into account, the WIN 0.15 μm GaAs pHEMT process is used for the 5-10 GHz and 8-20 GHz LNA design. Room-temperature S-parameters and noise temperature are measured first with gain larger than 20 dB, input and output reflection coefficients below -10 dB within the intended bandwidth. As for the cryogenic noise measurement, the 6 dB cold-attenuator method is used to obtain the corresponding Tn at different ambient temperatures. A noise improvement factor of 3 is observed for cryogenic LNA designed with this 0.15 μm GaAs process.

Original languageEnglish
Title of host publicationPIERS 2013 Taipei - Progress in Electromagnetics Research Symposium, Proceedings
Pages300-302
Number of pages3
StatePublished - 27 May 2013
EventProgress in Electromagnetics Research Symposium, PIERS 2013 Taipei - Taipei, Taiwan
Duration: 25 Mar 201328 Mar 2013

Publication series

NameProgress in Electromagnetics Research Symposium
ISSN (Print)1559-9450

Conference

ConferenceProgress in Electromagnetics Research Symposium, PIERS 2013 Taipei
CountryTaiwan
CityTaipei
Period25/03/1328/03/13

Fingerprint Dive into the research topics of 'Design and characterization of cryogenic wideband LNA using WIN 0.15 μm GaAs pHEMT process'. Together they form a unique fingerprint.

  • Cite this

    Chen, Y., Li, B., Wu, K. L., & Hu, S-I. (2013). Design and characterization of cryogenic wideband LNA using WIN 0.15 μm GaAs pHEMT process. In PIERS 2013 Taipei - Progress in Electromagnetics Research Symposium, Proceedings (pp. 300-302). (Progress in Electromagnetics Research Symposium).