A low insertion-loss single-pole double-throw switch in a standard 0.18-μm complementary metal-oxide semiconductor (CMOS) process was developed for 2.4- and 5.8-GHz wireless local area network applications. In order to increase the P1dB, the body-floating circuit topology is implemented. A nonlinear CMOS model to predict the switch power performance is also developed. The series-shunt switch achieves a measured P1dB of 21.3 dBm, an insertion loss of 0.7 dB, and an isolation of 35 dB at 2.4 GHz, while at 5.8 GHz, the switch attains a measured P1dB of 20 dBm, an insertion loss of 1.1 dB, and an isolation of 27 dB. The effective chip size is only 0.03 mm2. The measured data agree with the simulation results well, including the power-handling capability. To our knowledge, this study presents low insertion loss, high isolation, and good power performance with the smallest chip size among the previously reported 2.4- and 5.8-GHz CMOS switches.
|Number of pages||8|
|Journal||IEEE Transactions on Microwave Theory and Techniques|
|State||Published - 1 Jan 2006|
- Body-floating technique
- Complementary metal-oxide semiconductor (CMOS)
- Nonlinear model
- Single-pole double-throw (SPDT)