Design analysis of thin-body silicide source/drain devices

J. Kedzierski*, M. Ieong, P. Xuan, J. Bokor, T. J. King, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to conferencePaper

10 Scopus citations

Abstract

The design of thin-body silicide source/drain devices was analyzed. The low-barrier silicides were investigated for reducing the series resistance of thin-body silicon-on-insulator (SOI) devices. Two thin-body device types were simulated, one with source/drain region formed by silicide without doping and another in which the scilicide source/drains were terminated by a doped extension region. Results confirmed that the doped structure shows superior Ion in the design space and the undoped structure showed lower Ioff for a similar Leff.

Original languageEnglish
Pages21-22
Number of pages2
StatePublished - 3 Dec 2001
Event2001 IEEE International SOI Conference - Durango, CO, United States
Duration: 1 Oct 20014 Oct 2001

Conference

Conference2001 IEEE International SOI Conference
CountryUnited States
CityDurango, CO
Period1/10/014/10/01

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    Kedzierski, J., Ieong, M., Xuan, P., Bokor, J., King, T. J., & Hu, C-M. (2001). Design analysis of thin-body silicide source/drain devices. 21-22. Paper presented at 2001 IEEE International SOI Conference, Durango, CO, United States.