The design of thin-body silicide source/drain devices was analyzed. The low-barrier silicides were investigated for reducing the series resistance of thin-body silicon-on-insulator (SOI) devices. Two thin-body device types were simulated, one with source/drain region formed by silicide without doping and another in which the scilicide source/drains were terminated by a doped extension region. Results confirmed that the doped structure shows superior Ion in the design space and the undoped structure showed lower Ioff for a similar Leff.
|Number of pages||2|
|State||Published - 3 Dec 2001|
|Event||2001 IEEE International SOI Conference - Durango, CO, United States|
Duration: 1 Oct 2001 → 4 Oct 2001
|Conference||2001 IEEE International SOI Conference|
|Period||1/10/01 → 4/10/01|