1,1‐Dimethyl‐1‐silacyclobutane was used as a single‐source precursor to deposit SiC thin films on Si(100) and Si(111) by low‐pressure chemical vapor deposition (LPCVD). Polycrystalline β‐SiC thin films were grown at temperatures 1100 and 1200°C. At temperatures between 950 and 1100°C, amorphous thin films of silicon carbide were obtained. The films were studied by X‐ray diffraction (XRD), infrared spectroscopy (IR), scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM), and electron diffraction (ED).
- Low‐pressure chemical vapor deposition
- Silicon carbide thin films