Deposition of mesoporous silicon carbide thin films from (Me 3Si)4Sn: Tin nanoparticles as in situ generated templates

Chia Hsin Wang, Wen Yin Shen, Pei Sun Sheng, Chi Young Lee, Hsin-Tien Chiu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

With use of Sn(SiMe3)4 as the precursor, amorphous SiC1-x thin films with Sn nanoparticles embedded were grown on Si substrates at 923 K by low-pressure chemical vapor deposition. After treatment under hydrogen plasma at 923 K, the Sn nanoparticles in the films were removed by an HF solution and by evaporation at 1423 K. Following the removal of Sn, high-temperature treatments at 1273-1423 K converted the amorphous thin films into mesoporous semiconducting β-SiC thin films with pore sizes 10-100 nm.

Original languageEnglish
Pages (from-to)5250-5255
Number of pages6
JournalChemistry of Materials
Volume19
Issue number22
DOIs
StatePublished - 30 Oct 2007

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