Deposition of in situ boron-doped polycrystalline silicon films at reduced pressures

Horng-Chih Lin*, Hsiao Yi Lin, Chun Yen Chang, Tan Fu Lei, P. J. Wang, Ray Chern Deng, Jandel Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We report on the deposition of in situ boron-doped polycrystalline Si films on the SiO2 surface with reduced growth pressures at 550°C. The deposition rate of these films decreased as the doping level was greater than 1019 cm-3. Such a result is in sharp contrast to what has been observed previously for similar films grown with conventional low pressure chemical vapor deposition techniques. It was also found that the incubation time prior to the deposition of these films diminished as the doping level was increased to 3×1020 cm-3 or higher. It is attributed to the preferential adsorption of boron atoms on the SiO2 surface at the initial stage of growth, which facilitates the nucleation of Si.

Original languageEnglish
Pages (from-to)763-765
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number6
DOIs
StatePublished - 1 Dec 1994

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