Deposition of heteroepitaxial diamond on 6H-SiC single crystal by bias-enhanced microwave plasma chemical vapor deposition

Li Chang*, J. E. Yan, F. R. Chen, J. J. Kai

*Corresponding author for this work

Research output: Contribution to journalConference article

15 Scopus citations

Abstract

Deposition of heteroepitaxial diamond on substrates of 6H-SiC single crystal by a d.c. voltage biased-enhanced microwave plasma chemical vapor deposition method has been attempted. Various concentrations of methane (CH4) up to 10% in hydrogen (H2) was used to evaluate its effect on epitaxy. Characterization of cross-sectional transmission electron microscopy with electron energy loss spectroscopy shows that an interlayer can form between diamond 6H-SiC, depending on the CH4 concentration. With low CH4 concentration, diamond was directly nucleated on 6H-SiC with an orientation relationship of diamond {111}//6H-SiC {0001} and diamond <110>//6H-SiC <1120>. (C) 2000 Elsevier Science S.A. All rights reserved.

Original languageEnglish
Pages (from-to)283-289
Number of pages7
JournalDiamond and Related Materials
Volume9
Issue number3-6
DOIs
StatePublished - 1 Apr 2000
Event10th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide - Prague, Czech Republic
Duration: 12 Sep 199917 Sep 1999

Keywords

  • Bias
  • Heteroepitaxy
  • Silicon carbide
  • Transmission electron microscopy

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