Depletion-type cell-transistor on partial silicon-on-insulator substrate for 2×nm generation floating-gate NAND electrically erasable programmable read only memory

Makoto Mizukami*, Kiyohito Nishihara, Hirokazu Ishida, Fumiki Aiso, Tadashi Iguchi, Daigo Ichinose, Atsushi Fukumoto, Nobutoshi Aoki, Masaki Kondo, Takashi Izumida, Hiroyoshi Tanimoto, Toshiyuki Enda, Hiroshi Watanabe, Shuichi Toriyama, Takashi Suzuki, Ichiro Mizushima, Fumitaka Arai

*Corresponding author for this work

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