Depletion layer of gate poly-Si

Hiroshi Watanabe*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

The depletion effects of gate poly-Si are investigated in detail taking into consideration the fact that many-body effects due to carrier-carrier and carrier-ion interactions are different at the surface than in a bulk of the gate poly-Si. All calculations are self-consistently performed including an incomplete ionization of activated impurities in an iterative manner. As a result, it is found that the surface part of these interactions affects the equivalent oxide thickness determined by the capacitance - voltage fitting, and that the bulk part affects the determination of flat band potential. It is also found that the surface of the gate poly-Si is incompletely depleted, and the depletion layer is then wider than calculated when assuming the complete depletion (N S /N D ). The width of the incomplete depletion layer is studied in detail for the first time.

Original languageEnglish
Pages (from-to)2265-2271
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume52
Issue number10
DOIs
StatePublished - 1 Oct 2005

Keywords

  • Depletion layer
  • Gate poly-Si
  • Metal-insulator structures
  • MOS devices
  • Silicon

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