Dependence of the structure and orientation of VSS grown Si nanowires on an epitaxy process

Yi Ting Chiang, Yi Chou, Chang Hsun Huang, Wei Ting Lin, Yi-Chia Chou*

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

We investigated the vapor-solid-solid growth of Si nanowires from Ni silicides on Si(111), Si(110), and GaN substrates. The morphology and structures of Si on these substrates are distinct, and are dependent on substrate lattices and an epitaxy process during growth. The sidewall facets and epitaxy of silicides and Si were discussed. In addition, Si grown on GaN nanowires was investigated which led to the formation of branched nanowire structures. The Si nanowires/nanodots lie on the surface of GaN nanowires to maintain lower system energy. We manipulated the whole process in a UHV and studied the crystal growth of Si on different lattice substrates. Meanwhile, the process which occurred in a non-UHV led to less regularity on the NiSi2 crystal facets and interface epitaxy between NiSi2 and Si nanowires.

Original languageEnglish
Pages (from-to)4298-4304
Number of pages7
JournalCrystEngComm
Volume21
Issue number29
DOIs
StatePublished - 1 Jan 2019

Fingerprint Dive into the research topics of 'Dependence of the structure and orientation of VSS grown Si nanowires on an epitaxy process'. Together they form a unique fingerprint.

  • Cite this