Dependence of the noise behavior on the drain current for thin film transistors

Ya-Hsiang Tai, Chun Yi Chang, Chung Lun Hsieh, Yung Hsuan Yang, Wei Kuang Chao, Huan Ean Chen

Research output: Contribution to journalArticle

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Abstract

In this letter, a noise formula is newly proposed to calculate the low frequency noise for the three kinds of amorphous silicon, low temperature polycrystalline silicon, and amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs). It is found that the noise behavior of the TFT depends on its drain current in a simple manner. Based on the analysis, the ratios of drain current to the noise level for these TFTs are compared. It reveals that a-IGZO TFT is the best candidate to be used in the active pixel sensor.

Original languageEnglish
Article number6701182
Pages (from-to)229-231
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number2
DOIs
StatePublished - 1 Feb 2014

Keywords

  • active pixel sensor (APS)
  • amorphous indium-gallium-zinc oxide (a-IGZO)
  • low frequency noise (LFN)
  • Thin-film transistor (TFTs)

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    Tai, Y-H., Chang, C. Y., Hsieh, C. L., Yang, Y. H., Chao, W. K., & Chen, H. E. (2014). Dependence of the noise behavior on the drain current for thin film transistors. IEEE Electron Device Letters, 35(2), 229-231. [6701182]. https://doi.org/10.1109/LED.2013.2291565