Dependence of polarization on temperature coefficient resistance of (Ba,Sr)TiO3 thin films post-treated by RTA

Der Chi Shye*, Bi Shiou Chiou, Meng Wei Kuo, Jyh Shin Chen, Bruce C.S. Chou, Chueh Kuei Jan, Mei Fang Wu, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

The temperature coefficient of resistance (TCR) characteristics of Pt/(Ba0.8Sr0.2)TiO3 (BST)/Pt thin-film resistors are studied for the BST films with rapid thermal annealing (RTA) treatments. The polarizations induced by bias voltages greatly influence the TCR characteristics. The RTA-treated BST thin film exhibits negative TCR (NTCR) behavior at a negative voltage, but, intriguingly, positive TCR (PTCR) behavior at a positive voltage. According to the leakage current analysis, Schottky emission dominates the negatively biased current at the upper interface, but Heywang barrier scattering confines the positive biased current.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume6
Issue number4
DOIs
StatePublished - 1 Apr 2003

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