Dependence of photosensitive effect on the defects created by DC stress for LTPS TFTs

Ya-Hsiang Tai*, Yan Fu Kuo, Yun Hsiang Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

In this letter, the photosensitive effect of n-type low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) after dc stress was investigated. It was discovered that the photo-generated carrier behaviors under optical illumination are related to defect types created by different stress conditions of hot-carrier effect and self-heating effect. These two types of defect creation result in the different photosensitivity behaviors of LTPS TFT. A model considering the relation between photosensitivity and defect is proposed to explain the anomalous illumination behaviors after device degradation.

Original languageEnglish
Pages (from-to)1322-1324
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number12
DOIs
StatePublished - 8 Dec 2008

Keywords

  • DC stress
  • Leakage current
  • Photosensitivity
  • Poly-Si thin-film transistor (TFT)

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