Dependence of interface-state density on three dimensional silicon structure measured by charge-pumping method

K. Nakajima*, S. Sato, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Dependence of interface-state density (D it) on three dimensional (3D) Si channels with a rectangular cross section of various width and shape was measured by charge-pumping method with gated PIN-diode configuration formed on silicon-on-insulator (SOI) wafer. The increase in D it was observed with decreasing the width of the fin structure.

Original languageEnglish
Title of host publicationULSI Process Integration 7
Pages293-298
Number of pages6
Edition7
DOIs
StatePublished - 2011
Event7th Symposium on ULSI Process Integration - 220th ECS Meeting - Boston, MA, United States
Duration: 9 Oct 201114 Oct 2011

Publication series

NameECS Transactions
Number7
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference7th Symposium on ULSI Process Integration - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period9/10/1114/10/11

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    Nakajima, K., Sato, S., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., & Iwai, H. (2011). Dependence of interface-state density on three dimensional silicon structure measured by charge-pumping method. In ULSI Process Integration 7 (7 ed., pp. 293-298). (ECS Transactions; Vol. 41, No. 7). https://doi.org/10.1149/1.3633309