Dependence of interface-state density (D it) on three dimensional (3D) Si channels with a rectangular cross section of various width and shape was measured by charge-pumping method with gated PIN-diode configuration formed on silicon-on-insulator (SOI) wafer. The increase in D it was observed with decreasing the width of the fin structure.
|Title of host publication||ULSI Process Integration 7|
|Number of pages||6|
|State||Published - 2011|
|Event||7th Symposium on ULSI Process Integration - 220th ECS Meeting - Boston, MA, United States|
Duration: 9 Oct 2011 → 14 Oct 2011
|Conference||7th Symposium on ULSI Process Integration - 220th ECS Meeting|
|Period||9/10/11 → 14/10/11|