Dependence of GaN defect structure on the growth temperature of the AlN buffer layer

Yuen Yee Wong*, Edward Yi Chang, Tsung Hsi Yang, Jet Rung Chang, Yi G. Chen, Jui Tai Ku

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The defect structure of the GaN film grown on sapphire by plasma-assisted molecular beam epitaxy (PAMBE) technique was found to be dependent on the AlN buffer layer growth temperature. This buffer growth temperature controlled the defect density in GaN film but had shown contrary effects on the density of screw threading dislocation (TD) and edge TD. The density of screw TD was high on lower temperature buffer but low on the higher temperature buffer. Meanwhile the density of edge TD had shown the opposite. Further examinations have suggested that the defect structure was closely related to the stress in the GaN film, which can be controlled by the growth temperature of the AlN buffer. Using the 525°C AlN buffer, optimum quality GaN film with relatively low screw and edge TDs were achieved.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings - Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates
Pages135-139
Number of pages5
StatePublished - 18 Dec 2008
EventAdvances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates - San Francisco, CA, United States
Duration: 24 Mar 200828 Mar 2008

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1068
ISSN (Print)0272-9172

Conference

ConferenceAdvances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates
CountryUnited States
CitySan Francisco, CA
Period24/03/0828/03/08

Fingerprint Dive into the research topics of 'Dependence of GaN defect structure on the growth temperature of the AlN buffer layer'. Together they form a unique fingerprint.

Cite this