The pulsed laser deposition (PLD) of (Pb,Sr)TiO3 (PSrT) films on Pt/SiO2/Si at low substrate temperatures (Ts), ranging from 300 to 450°C, has been investigated. The PLD PSrT films prepared at low Ts exhibit ferroelectric properties, good crystallinity, and no significant interdiffusion between the PSrT film and the Pt bottom electrode. The conduction mechanism is identified as Schottky emission at low electric fields and as Poole-Frenkel emission at high electric fields. PSrT films grown at appropriate Ts yield fewer interface states and fewer trapping states, leading to a smaller leakage current. The enhanced (100) preferred orientation of PSrT films deposited at Ts = 350-400°C exhibits optimum ferroelectricity. In addition, the dielectric constant and ferroelectricity are associated with the preferred orientation. This shows that the electrical characteristics strongly rely on the preferred orientation and trapping states, which could be controlled by varying the substrate temperature (Ts ≤ 450°C) during PLD.
|Number of pages||6|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||10 A|
|State||Published - 9 Oct 2007|
- Deposition temperature (substrate temperature)
- Laser ablation (pulsed laser deposition)