Dependence of energy gap on magnetic field in semiconductor nano-scale quantum rings

Yi-Ming Li*, Hsiao Mei Lu, O. Voskoboynikov, C. P. Lee, S. M. Sze

*Corresponding author for this work

Research output: Contribution to journalConference article

34 Scopus citations

Abstract

We study the electron and hole energy states for a complete three-dimensional (3D) model of semiconductor nano-scale quantum rings in an external magnetic field. In this study, the model formulation includes: (i) the position dependent effective mass Hamiltonian in non-parabolic approximation for electrons, (ii) the position dependent effective mass Hamiltonian in parabolic approximation for holes, (iii) the finite hard wall confinement potential, and (iv) the Ben Daniel-Duke boundary conditions. To solve this 3D non-linear problem, we apply the non-linear iterative method to obtain self-consistent solutions. We find a non-periodical oscillation of the energy band gap between the lowest electron and hole states as a function of external magnetic fields. The result is useful in describing magneto-optical properties of the nano-scale quantum rings.

Original languageEnglish
Pages (from-to)811-815
Number of pages5
JournalSurface Science
Volume532-535
DOIs
StatePublished - 10 Jun 2003
EventProceedings of the 7th International Conference on Nanometer - Malmo, Sweden
Duration: 29 Aug 200231 Aug 2002

Keywords

  • Computer simulations
  • Gallium arsenide
  • Heterojunctions
  • Indium arsenide
  • Magnetic phenomena (cyclotron resonance, phase transitions, etc.)
  • Quantum effects

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