Dependence of electron mobility on doped impurities

Yung-Fu Chen*, Cheng May Kwei, Pin Su, Chuan Jong Tung

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


The dependence of electron mobility on doped impurities was investigated. Analytical expressions of the momentum relaxation cross section and the electron mobility in n- and p-doped silicon for electron-impurity scatterings have been derived. Our approach involved the application of a screened scattering potential based on a charge density distribution for impurity ions in the semiconductor. This distribution was determined by the variational statistical method. Calculated results showed that ionized acceptor impurities in silicon scattered electron carriers less strongly than did ionized donor impurities. They also showed that majority electron mobility in n-type silicon was less than minority electron mobility in p-type silicon. These were consistent with experimental observations.

Original languageEnglish
Pages (from-to)4827-4833
Number of pages7
JournalJapanese Journal of Applied Physics
Issue number9R
StatePublished - 1 Jan 1995


  • Charge density distribution
  • Electron-impurity scattering
  • Momentum relaxation cross section
  • Variational statistical method

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