Dependence of Channel Electric Field on Device Scaling

T. Y. Chan, P. K. Ko, Chen-Ming Hu

Research output: Contribution to journalArticle

108 Scopus citations

Abstract

It has been shown previously that the maximum channel electric field Emin a MOSFET is the most important parameter relating to all hot-electron effects and that Emcan be represented as (VDS - VDSAT)/l, where l may be regarded as the effective length of the velocity-saturation region. The dependence of l on device geometries and process parameters is investigated in this letter. From both experiment and two-dimensional (2-D) simulation, it is found that Emhas a form of (vds vdsat)/ 0.22T1/3 oxX1/2 J, Channel length affects the saturation voltage, thus influencing the maximum channel electric field. The scaling of oxide thickness and junction depth, however, often has even greater effects on channel field. This semiempirical model of Emagrees with Emdeduced from I SUB within about 5 percent; it can predict I SUB which has been empirically correlated with hot-electron degradations.

Original languageEnglish
Pages (from-to)551-553
Number of pages3
JournalIEEE Electron Device Letters
Volume6
Issue number10
DOIs
StatePublished - 1 Jan 1985

Fingerprint Dive into the research topics of 'Dependence of Channel Electric Field on Device Scaling'. Together they form a unique fingerprint.

  • Cite this