Density-dependent energy relaxation of hot electrons in InN epilayers

M. D. Yang, Y. W. Liu, J. L. Shen, C. W. Chen, G. C. Chi, T. Y. Lin, Wu-Ching Chou, M. H. Lo, Hao-Chung Kuo, Tien-chang Lu

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This work investigates the dependence of the hot-electron energy relaxation in InN epilayers on electron density. From the high-energy tail of photoluminescence, the electron temperature of the hot electrons was determined. Acoustic phonons have an important role in the energy relaxation of the hot electrons. The density-dependent electron energy loss rate in InN can be explained by a combination of longitudinal optical and acoustic phonon emissions. A slowing of energy loss rate at high electron densities was observed and attributed to piezoelectric coupling to acoustic phonons.

Original languageEnglish
Article number013526
JournalJournal of Applied Physics
Issue number1
StatePublished - 9 Jul 2009

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    Yang, M. D., Liu, Y. W., Shen, J. L., Chen, C. W., Chi, G. C., Lin, T. Y., Chou, W-C., Lo, M. H., Kuo, H-C., & Lu, T. (2009). Density-dependent energy relaxation of hot electrons in InN epilayers. Journal of Applied Physics, 105(1), [013526].