Density-dependent energy relaxation of hot electrons in InN epilayers

M. D. Yang, Y. W. Liu, J. L. Shen, C. W. Chen, G. C. Chi, T. Y. Lin, Wu-Ching Chou, M. H. Lo, Hao-Chung Kuo, Tien-chang Lu

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Abstract

This work investigates the dependence of the hot-electron energy relaxation in InN epilayers on electron density. From the high-energy tail of photoluminescence, the electron temperature of the hot electrons was determined. Acoustic phonons have an important role in the energy relaxation of the hot electrons. The density-dependent electron energy loss rate in InN can be explained by a combination of longitudinal optical and acoustic phonon emissions. A slowing of energy loss rate at high electron densities was observed and attributed to piezoelectric coupling to acoustic phonons.

Original languageEnglish
Article number013526
JournalJournal of Applied Physics
Volume105
Issue number1
DOIs
StatePublished - 9 Jul 2009

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    Yang, M. D., Liu, Y. W., Shen, J. L., Chen, C. W., Chi, G. C., Lin, T. Y., Chou, W-C., Lo, M. H., Kuo, H-C., & Lu, T. (2009). Density-dependent energy relaxation of hot electrons in InN epilayers. Journal of Applied Physics, 105(1), [013526]. https://doi.org/10.1063/1.3056383