Denser and more stable SRAM using FinFETs with multiple fin heights

Angada B. Sachid*, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticle

38 Scopus citations

Abstract

We present the optimization of multiple-fin-height FinFET static random access memory (SRAM) to reduce cell leakage and improve the stability and density of SRAM. Using a taller fin FinFET for the pull-down device increases the read static noise margin of the SRAM and can potentially reduce the SRAM cell area. A reasonable amount of channel doping in all the transistors can be used to reduce the cell leakage current without appreciably degrading the stability of the SRAM cell. Increasing the channel doping of the access transistor simultaneously improves the read stability and decreases the cell leakage current of the SRAM cell.

Original languageEnglish
Article number6220243
Pages (from-to)2037-2041
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume59
Issue number8
DOIs
StatePublished - 27 Jun 2012

Keywords

  • Cell leakage
  • FinFET
  • noise margin
  • static random access memory (SRAM)

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