Demonstration of HfO 2 -Based Gate Dielectric with Low Interface State Density and Sub-nm EOT on Ge by Incorporating Ti into Interfacial Layer

Yi He Tsai, Chen Han Chou, Yun Yan Chung, Wen Kuan Yeh, Yu Hsien Lin, Fu-Hsiang Ko, Chao-Hsin Chien*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

HfO 2 -based gate stacks with titanium (Ti) incorporated into a GeO x interfacial layer (IL) were fabricated on p-Ge substrates. X-ray photoelectron spectroscopy results, incorporating Ti, can efficiently suppress the GeO volatilization. This contributed to achievement of an equivalent oxide thickness of approximately 0.8 nm, a low interface states density Dit of approximately 2.5 ×,1011 eV - 1 cm - 2, and a smaller Dit increment of approximately 1 × 1011eV-1 cm -2 after constant negative voltage stress at a field of 8 MV/cm. Therefore, Ti is appropriate for improving the quality of GeO x through high temperature annealing.

Original languageEnglish
Article number8579236
Pages (from-to)174-176
Number of pages3
JournalIEEE Electron Device Letters
Volume40
Issue number2
DOIs
StatePublished - 1 Feb 2019

Keywords

  • Constant voltage stress (CVS)
  • germanium
  • germanium oxide (GeO )
  • hafnium oxide (HfO )
  • titanium (Ti)

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