Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS2 Channel Directly Grown on SiOx/Si Substrates Using Area-Selective CVD Technology

Yun Yan Chung, Jia Min Shieh, Sheng Kai Su, Hung Li Chiang, Tzu Chiang Chen, Lain Jong Li, H. S.Philip Wong, Wen Bin Jian, Chao Hsin Chien*, Kuan Cheng Lu, Chao Ching Cheng, Ming Yang Li, Chao Ting Lin, Chi Feng Li, Jyun Hong Chen, Tung Yen Lai, Kai Shin Li

*Corresponding author for this work

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Engineering & Materials Science