Demonstrating 1 nm-oxide-equivalentthickness La2O3 and HfO2 multi-layer composite oxides on In0.53Ga0.47As MOS capacitor

Wen Hao Wu, Yueh Chin Lin, Tzu Ching Hou, Tai Wei Lin, Hisang Hua Hsu, Yuen Yee Wong, Hiroshi Iwai, Kuniyuki Kakushima, Edward Yi Chang*

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

The use of a high k composite dielectric composed of La2O3 and HfO2 layers as the gate dielectric for In0.53Ga0.47As MOS application is proposed. Two multi-layer structures of La2O3 (1 nm)/HfO2 (1 nm) and La2O3 (0.5 nm)/HfO2 (0.5 nm) were deposited and annealed at 450 and 500°C for device performance comparison. X-ray photoelectron spectroscopy, TEM and C-V measurements were used for the interface analysis between the oxide and the semiconductor. Finally, a 1 nm equivalent-oxide-thickness dielectric with small hysteresis of 88 mV and Dit of 1.9 × 1012 cm-2 eV-1 was achieved for six layers of an La2O3 (0.5 nm)/HfO2 (0.5 nm) composite oxide structure on an In0.53Ga0.47As MOS capacitor with a post-deposition annealing temperature of 450°C.

Original languageEnglish
Pages (from-to)59-61
Number of pages3
JournalElectronics Letters
Volume52
Issue number1
DOIs
StatePublished - 8 Jan 2016

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