Demonstrating 1 nm-oxide-equivalent-thickness HfO 2 /InSb structure with unpinning Fermi level and low gate leakage current density

Hai Dang Trinh, Yueh Chin Lin, Minh Thuy Nguyen, Hong Quan Nguyen, Quoc Van Duong, Quang Ho Luc, Shin Yuan Wang, Manh Nghia Nguyen, Edward Yi Chang

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Abstract

In this work, the band alignment, interface, and electrical characteristics of HfO 2 /InSb metal-oxide-semiconductor structure have been investigated. By using x-ray photoelectron spectroscopy analysis, the conduction band offset of 1.78 ± 0.1 eV and valence band offset of 3.35 ± 0.1 eV have been extracted. The transmission electron microscopy analysis has shown that HfO 2 layer would be a good diffusion barrier for InSb. As a result, 1 nm equivalent-oxide-thickness in the 4 nm HfO 2 /InSb structure has been demonstrated with unpinning Fermi level and low leakage current of 10 -4 A/cm -2 . The D it value of smaller than 10 12 eV -1 cm -2 has been obtained using conduction method.

Original languageEnglish
Article number142903
JournalApplied Physics Letters
Volume103
Issue number14
DOIs
StatePublished - 21 Oct 2013

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