Degradation of InGaN/GaN LEDs under forward-bias operations in salty water vapor

Hsiang Chen*, Kun Min Hsieh, Yun Yang He, Li Chen Chu, Ming Ling Lee, Kow-Ming Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Forward-bias stress in salty water vapor can quickly degrade the InGaN/GaN LEDs. To examine the weakness of the device, electrical, optical, and material analyses and characterizations were performed to investigate the failure mechanism. Corrosion of the electrode and Au atom diffusion might result in damages of the device. Results indicate that forward-bias stress in salty water vapor can quickly influence the material properties, optical behaviors, and electrical characteristics of the LED device.

Original languageEnglish
Pages (from-to)7-10
Number of pages4
JournalJournal of New Materials for Electrochemical Systems
Volume19
Issue number1
DOIs
StatePublished - 1 Jan 2016

Keywords

  • Au diffussion
  • Corrosion
  • Forward-bias
  • Green InGaN/GaN LED
  • Salty water vapor

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