Degradation of capacitance-voltage characteristics induced by self-heating effect in poly-Si TFTs

Ya-Hsiang Tai*, Shih Che Huang, Hao Lin Chiu

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

The degradation of poly-Si thin film transistors (TFTs) under self-heating stress was investigated via the capacitance between the source and the gate (CGS), and that between the drain and the gate (CGD). Consequently, the normalized CGS and CGD after stress positively shift 2 V for the gate voltage near flat band voltage. In addition, CGS raises about 40% for the lower gate voltage, while CGD raises only about 10%. With simulation results, it is found that the self-heating effect creates interface states near the source region and the deep states near drain, resulting in the different inclines of the of CGS and CGD curves.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume9
Issue number6
DOIs
StatePublished - 1 Jun 2006

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