Degradation of a-IGZO Thin-Film Transistors under Negative Bias and Illumination Stress in the Time Span of a Few Seconds

Ya-Hsiang Tai, H. W. Liu, P. C. Chan*, S. L. Chiu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

This letter investigated the time response behavior of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) under negative gate bias and illumination stress (NBIS) in sub-seconds. For the first time, significant degradation even in periods as short as sub-seconds under NBIS was observed. The stretched-exponential behavior of threshold voltage shift (Δ Vth) revealed similar mechanisms for short- and long-term NBIS. As a-IGZO TFTs operate at a very high speed, the non-negligible $\Delta $ Vth owing to the influence of fast oxygen vacancy needs to be considered to ensure a-IGZO TFT circuits function well in real applications.

Original languageEnglish
Pages (from-to)696-698
Number of pages3
JournalIEEE Electron Device Letters
Volume39
Issue number5
DOIs
StatePublished - 1 May 2018

Keywords

  • Amorphous indium gallium zinc oxide (a-IGZO)
  • negative bias and illumination stress (NBIS)
  • thin-film transistor (TFT)

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