Degradation mechanisms of bias stress on nitride-based near-ultraviolet light-emitting diodes in salt water vapor ambient

Lih Ren Chen, Shen Che Huang, Jo Lun Chiu, Chien Cheng Lu, Wei Ming Su, Chen Yuan Weng, Huan Yu Shen, Tien Chang Lu*, Hsiang Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Degradation mechanisms of nitride-based near-ultraviolet (near-UV) light-emitting diodes (LEDs) were systematically analyzed by applying forward- and reverse-bias stresses to them in a salt water vapor ambient. The surface temperature of the forward-bias stress sample was higher than that of the reverse-bias stress sample. The high temperature of the forward-bias stress sample accelerated the chemical reaction of the device structure with salt water vapors and led to faster degradation. Composition analyses of the sample surface and cross-section were conducted to investigate the failure mechanism. The analyses results indicated that the erosion of the indium–tin–oxide layer enhanced the diffusion of the conducting metal into the LED crystal. The proposed method can effectively characterize the quality of near-UV LEDs in a short duration.

Original languageEnglish
Article number111158
JournalMicroelectronic Engineering
Volume218
DOIs
StatePublished - 15 Oct 2019

Keywords

  • Bias stress
  • Failure mechanisms
  • Near-UV LEDs
  • Reliability

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