Degradation and breakdown of W-La2O3 stack after annealing in N2

Joel Molina*, Alfonso Torres, Wilfrido Calleja, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations


We report the effect of relatively high-voltage stressing (under substrate injection) on the stress-induced leakage current (SILC) and breakdown of W-La2O3 stacked structures. It is shown that the gate area of the metal-insulator-semiconductor (MIS) devices under evaluation influences their final degradation characteristics after stress. Once the samples reach breakdown, their post-breakdown current-voltage (I-V) characteristics suggest that leakage spots are highly localized and are caused by the accumulation of defects.

Original languageEnglish
Pages (from-to)7076-7080
Number of pages5
JournalJapanese journal of applied physics
Issue number9 PART 1
StatePublished - 12 Sep 2008


  • Breakdown
  • LaO
  • PMA
  • Reliability
  • SILC

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    Molina, J., Torres, A., Calleja, W., Kakushima, K., Ahmet, P., Tsutsui, K., Sugii, N., Hattori, T., & Iwai, H. (2008). Degradation and breakdown of W-La2O3 stack after annealing in N2. Japanese journal of applied physics, 47(9 PART 1), 7076-7080.