Active InGaAsSb/AlGaAsSb type-I quantum well (QW) compositions acceptable for pseudomorphic growth on GaSb substrates restrict the optical range to below 4 mu m. Increasing the In concentration in active region and growing lattice-matched barrier/cladding layers will reach higher emission wavelength. We need to overcome several issues during fabrication process to ensure this high quality epitaxial layer. In this paper, high-resolution x-ray diffraction (HRXRD) method is used to define optimal epitaxy parameters for stable type-I GaSb-based mid infrared laser structures.
|Title of host publication||4th IEEE International Conference on Applied System Invention (IEEE ICASI)|
|Number of pages||4|
|State||Published - 2018|
- type-I QW; InGaAsSb/AlGaAsSb; HRXRD; lattice-matched