Define high quality Type-I InGaAsSb/AlGaAsSb QW laser fabrication process with high-resolution x-ray diffraction

Hui Wen Cheng, Chien Hung Lin, Chien-Ping Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Active InGaAsSb/AlGaAsSb type-I quantum well (QW) compositions acceptable for pseudomorphic growth on GaSb substrates restrict the optical range to below 4 mu m. Increasing the In concentration in active region and growing lattice-matched barrier/cladding layers will reach higher emission wavelength. We need to overcome several issues during fabrication process to ensure this high quality epitaxial layer. In this paper, high-resolution x-ray diffraction (HRXRD) method is used to define optimal epitaxy parameters for stable type-I GaSb-based mid infrared laser structures.
Original languageEnglish
Title of host publication4th IEEE International Conference on Applied System Invention (IEEE ICASI)
Pages1354-1357
Number of pages4
DOIs
StatePublished - 2018

Keywords

  • type-I QW; InGaAsSb/AlGaAsSb; HRXRD; lattice-matched

Fingerprint Dive into the research topics of 'Define high quality Type-I InGaAsSb/AlGaAsSb QW laser fabrication process with high-resolution x-ray diffraction'. Together they form a unique fingerprint.

Cite this