Defects in m -plane ZnO epitaxial films grown on (112) LaAlO3 substrate

Wei Lin Wang*, Chun Yen Peng, Yen Teng Ho, Shu Chang Chuang, Li Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

The crystallographic orientations of m -plane ZnO on (112) LaAlO 3 (LAO) substrate are [1- 2 1- 0]ZnO ∥ [11 1-] LAO and [0001] ZnO ∥ [1- 10] LAO. The defects in m -plane ZnO have been systematically investigated using cross section and plan-view transmission electron microscopy (TEM). High-resolution TEM observations in cross section show misfit dislocations and basal stacking faults (BSFs) at the ZnO/LAO interface. In the films, threading dislocations (TDs) with 1/3 〈 11 2- 0 〉 Burgers vectors are distributed on the basal plane, and BSFs have 1/6 〈 20 2- 3 〉 displacement vector. The densities of dislocations and BSFs are estimated to be 5.1× 1010 cm-2 and 4.3× 105 cm-1, respectively. In addition to TDs and BSFs, plan-view TEM examination also reveals that stacking mismatch boundaries mainly lie along the m -planes and they connect with planar defect segments along the r -planes.

Original languageEnglish
Article number031001
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume29
Issue number3
DOIs
StatePublished - 1 May 2011

Fingerprint Dive into the research topics of 'Defects in m -plane ZnO epitaxial films grown on (112) LaAlO<sub>3</sub> substrate'. Together they form a unique fingerprint.

  • Cite this