Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes

M. H. Lo*, P. M. Tu, C. H. Wang, Y. J. Cheng, C. W. Hung, S. C. Hsu, Hao-Chung Kuo, Hsiao-Wen Zan, S. C. Wang, C. Y. Chang, C. M. Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

35 Scopus citations

Abstract

A defect selective passivation method to block the propagation of threading dislocations in GaN epitaxial growth is demonstrated. The defect selective passivation is done by using defect selective chemical etching to locate defect sites, followed by silicon oxide passivation of the etched pits, and epitaxial over growth. The threading dislocation density in the regrown epilayer is significantly improved from 1 × 10 9 to 4 × 10 7 cm -2 . The defect passivated epiwafer is used to grow light emitting diode and the output power of the fabricated chip is enhanced by 45% at 20 mA compared to a reference one without using defect passivation.

Original languageEnglish
Article number211103
JournalApplied Physics Letters
Volume95
Issue number21
DOIs
StatePublished - 14 Dec 2009

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