In this study, deep-ultraviolet 280-nm-wavelength light-emitting diodes (DUV LEDs) with a nanopatterned sapphire substrate (NPSS) were fabricated using a nanoimprint lithography process. The output power of these flip-chip (FC) DUV LEDs was measured and analyzed in a ray-tracing simulation using NPSSs: cones with diameters of 2.5 μm (LED1), 400 (LED2) and 200 nm (LED3) as well as holes with diameters of 350 (LED4) and 750 nm (LED5). For comparison, a mirror for the c-plane FC DUV LEDs was introduced by coating Ni/Au and Al thin films. With the injection current at 350 mA, the output powers of the c-plane, LED1, LED2, LED3, LED4, and LED5 were 13.38, 14.68, 20.05, 16.79, 15.74, and 18.93 mW, respectively. The LED2 efficiency improved 49.9% compared with mirror LED and the result was consistent with ray-tracing simulation.