DEEP-TRENCH POWER MOSFET WITH AN R//O//N AREA PRODUCT OF 160 M OMEGA -mm**2.

Daisuke Ueda*, Hiromitsu Takagi, Gota Kano

*Corresponding author for this work

Research output: Contribution to journalConference article

14 Scopus citations

Abstract

A power MOSFET having an R//o//n area product of 160 m OMEGA multiplied by mm**2 (R//o//n equals 11 m OMEGA : BVdss equals 15 V, chip area 3. 8 mm multiplied by 3. 8 mm) which is approximately one-third of the lowest value believed reported is demonstrated. A recently developed deep-trench structure has contributed to such drastic reduction of the product. The advantages of the present structure are summarized as, low channel-resistance owing to the high-density packing capability, low spreading resistance in an epi-region due to the increased area of an accumulation layer formed along the sidewalls of the grooves, and completely eliminated parasitic JFET effect.

Original languageEnglish
Pages (from-to)638-641
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1986

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