Deep-submicron CMOS process integration of HfO2 gate dielectric with poly-si gate

Qiang Lu, R. Lin, H. Takeuchi, Tsu Jae King, Chen-Ming Hu, K. Onishi, Rino Choi, Chang Seok Kang, J. C. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

We demonstrate the integration of sputterdeposited ultra-thin HfO2 gate dielectric into a sub-100 nm gate length CMOS process using poly-Si as the gate material. Good device characteristics have been observed down to 70 nm physical gate length, and an equivalent gate oxide thickness (EOT) of 11Å has been achieved. Both p-FETs and n-FETs with HfO2 gate dielectric show ∼104x lower gate leakage than Si02 with comparable EOT. Data and model suggest that the gate leakage of Hf02 will be lOO times lower than that of Si02 down to 5Å EOT.

Original languageEnglish
Title of host publication2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages377-380
Number of pages4
ISBN (Electronic)0780374320, 9780780374324
DOIs
StatePublished - 1 Jan 2001
EventInternational Semiconductor Device Research Symposium, ISDRS 2001 - Washington, United States
Duration: 5 Dec 20017 Dec 2001

Publication series

Name2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings

Conference

ConferenceInternational Semiconductor Device Research Symposium, ISDRS 2001
CountryUnited States
CityWashington
Period5/12/017/12/01

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    Lu, Q., Lin, R., Takeuchi, H., King, T. J., Hu, C-M., Onishi, K., Choi, R., Kang, C. S., & Lee, J. C. (2001). Deep-submicron CMOS process integration of HfO2 gate dielectric with poly-si gate. In 2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings (pp. 377-380). [984521] (2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISDRS.2001.984521