Deep-submicrometer MOSFET model for analog/digital circuit simulations

M. C. Jeng*, P. K. Ko, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

27 Scopus citations

Abstract

An accurate drain current model for deep-submicrometers MOSFETs down to the Leff = 0.25 μm for digital as well as analog applications has been developed. The model is based on the recently improved physical understanding of deep-submicron MOS devices. Care has been taken to retain the basic functional from fully physical models while improving model accuracy and computational efficiency. The ease of parameter extraction was also a major consideration. In addition to the effects commonly included in the MOSFET current equation, the inversion-layer capacitance effect, hot-electron-induced output-resistance degradation, and source/drain parasitic resistance effect have been taken into account.

Original languageEnglish
Pages (from-to)114-117
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1988
EventTechnical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA
Duration: 11 Dec 198814 Dec 1988

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