Deep-Submicrometer MOS Device Fabrication Using a Photoresist-Ashing Technique

J. Chung, M. C. Jeng, J. E. Moon, A. T. Wu, T. Y. Chan, P. K. Ko, Chen-Ming Hu

Research output: Contribution to journalArticlepeer-review

75 Scopus citations

Abstract

A photoresist-ashing process has been developed which, when used in conjunction with conventional g-line optical lithography, permits the controlled definition of deep-submicrometer features. The ultra-fine lines were obtained by calibrated ashing of the lithographically defined features in oxygen plasma. The technique has been successfully employed to fabricate MOSFET's with effective channel length as small as 0.15 μm that show excellent characteristics. An NMOS ring oscillator with 0.2-μm devices has been fabricated with a room-temperature propagation delay of 22 ps/stage which is believed to be the fastest value obtained for a MOS technology. Studies indicate that the thinning is both reproducible and uniform so that it should be usable in circuit as well as device fabrication. Since most polymer-based resist materials are etchable with an oxygen plasma, the basic technique could be extended to supplement other lithographic processes, including e-beam and X-ray processes, for fabricating both silicon and nonsilicon devices and circuits.

Original languageEnglish
Pages (from-to)186-188
Number of pages3
JournalIEEE Electron Device Letters
Volume9
Issue number4
DOIs
StatePublished - 1 Jan 1988

Fingerprint Dive into the research topics of 'Deep-Submicrometer MOS Device Fabrication Using a Photoresist-Ashing Technique'. Together they form a unique fingerprint.

Cite this