Deep levels, electrical and optical characteristics in SnTe-Doped GaSb Schottky diodes

Jenn-Fang Chen*, N. C. Chen, H. S. Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The GaSb layers investigated were grown directly on GaAs substrates by molecular beam epitaxy (MBE) using SnTe source as the n-type dopant. By using admittance spectroscopy, a dominant deep level with the activation energy of 0.23-0.26 eV was observed and its concentration was affected by the Sb4/Ga flux ratio in the MBE growth. A lowest deep-level concentration together with a highest mobility was obtained for GaSb grown at 55°C under a Sb4/Ga beam equivalent pressure (BEP) ratio around 7, which should correspond to the lowest ratio to maintain a Sb-stabilized surface reconstruction. In the Hall measurement, an analysis of the temperature-dependent mobility shows that the ionized impurity concentration increases proportionally with the sample's donor concentration, suggesting that the ionized impurity was introduced by an SnTe source. In addition, optical properties of an undoped p-, a lightly and heavily SnTe-doped GaSb layers were studied by comparing their photoluminescence spectra at 4.5K.

Original languageEnglish
Pages (from-to)1790-1796
Number of pages7
JournalJournal of Electronic Materials
Volume25
Issue number11
DOIs
StatePublished - Nov 1996

Keywords

  • Deep levels
  • GaSb Schottky diodes
  • Hall measurement
  • Photoluminescence (PL)
  • SnTe dopants

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