Deep level transient spectroscopy depth profile measurements of polycrystalline zinc oxide ceramic

Wei-I Lee*, R. L. Young, Wei-Kuo Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

A method is proposed for performing deep level transient spectroscopy depth profile measurements of defects in polycrystalline ZnO. A multilayer-chip ZnO varistor structure is adopted to minimize the number of grains connected in series. It is verified that the distributions of some defects near the ZnO grain boundary are highly nonuniform. Valuable information has been obtained from the measured defect distribution profiles.

Original languageEnglish
Pages (from-to)L1158-L1160
Number of pages3
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume35
Issue number9 B
DOIs
StatePublished - Sep 1996

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